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    DSAQ00274607.pdf

    • California Eastern Laboratories
    • SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffus
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    DSAQ00274607.pdf preview Download Datasheet

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    Marking W3 NE5511279A-A NE5511279A-T1A

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