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DSA00455871.pdf
Manufacturer
Central Semiconductor
Partial File Text
PROCESS CP311 Power Transistor NPN High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 109.5 x 109.5 MILS Die Thickness 9.0 MILS Base Bonding
Datasheet Type
Original
ECAD Model
Part Details
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CJDD3110
CP311
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