BF1102,115 datasheet
- NXP Semiconductors
- Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; I<sub>D</sub>: 40 mA; I<sub>DSS</sub>: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd
- Original
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