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DSA00588069.pdf
Manufacturer
Renesas Electronics
Partial File Text
Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features · Built-in fast recovery diode · Low on-resistance RDS(on) = 0.42 typ. (at ID = 7 A, VGS = 10 V, T
Datasheet Type
Original
ECAD Model
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