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    DSA0074420.pdf

    • Samsung Electronics
    • SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.25 Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate C
    • Original
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    DSA0074420.pdf preview Download Datasheet

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    SSH22N50A

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