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    DSAE0013575.pdf

    • Infineon Technologies
    • IPB04CN10N G IPI04CN10N G IPP04CN10N G OptiMOS®2 Power-Transistor Product Summary Features V DS 100 V · N-channel, normal level R DS(on),max (TO 263) 3.9 m ID 1
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    DSAE0013575.pdf preview Download Datasheet

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