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    DSA00592878.pdf

    • Renesas Electronics
    • Preliminary Datasheet RJK0603DPN-E0 N-Channel MOS FET 60 V, 80 A, 5.2 m Features High speed switching Low drive current Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Package TO-220A
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