BAS416,115 datasheet
by NXP Semiconductors
- Low-leakage diode - C<sub>d</sub> max.: 2 pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 3000 ns; V<sub>F</sub>max: 1@IF=10mA mV; V<sub>R</sub> max: 75 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
- Original
- Yes
- Unknown
- Transferred
-
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