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    DSAZIHA100053206.pdf

    • American Microsemiconductor
    • 355 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)35 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A)1.0m @V(CBO) (V)
    • Original

    DSAZIHA100053206.pdf preview Download Datasheet

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