DSAH00216404.pdf
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IXYS
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Insulated Gate Bipolar Transistors IGBT-Chips
"S" series with improved SCSOA capability
Type TJM = 150°C V
Low VCE(sat)
VCES
VCE(sat) V 2 3.4 2.4 2.3 2.6 2.2 2.2 2 2.2 3.9 3.4 3.9 3.6 3.3 3.5
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Original
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