DSASW00201766.pdf
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Infineon Technologies
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Application Note, Rev. 1.1, May 2009
Application Note No. 170
BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in
5 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise
Figure & < 100 nanosecond
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Original
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