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DSAIHSC00052828.pdf
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SGM2006M/P SONY. GaAs N-channel Dual Gate MES FET Description S G M 2 0 0 6 M / P is an N-channel dual gate G aA s M ES F E T fo r UHF band lo w -n o ise am plification. T h is F E T is suit
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SGM2006M
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