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DSAIHSC000104309.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs (L, S-Band) Features ⢠High power - P idB = 42.0 dBm at 2.6 GHz ⢠High gain - G-icb = 12.0 dB at 2.6 GHz ⢠Partially
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ECAD Model
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