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DSA007905.pdf
Manufacturer
IXYS
Partial File Text
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE(sat) 3.2V (Electrically Isolated Tab)
Datasheet Type
Original
ECAD Model
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IXBF12N300
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