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DSA00389703.pdf
Manufacturer
Toshiba
Partial File Text
MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz HIGH GAIN HERMETIC
Datasheet Type
Original
ECAD Model
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TIM8596-2