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    Scans-0037734.pdf

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    • NPN EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL US
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    142 TRANSISTOR TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F

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