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    Scans-0028416.pdf

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    • ^EDI ELECTRONIC DESIGNS. INC EDI4164MEV-RP 4Megx16 EDO DRAM Features 4 Meg x 16 bit CMOS Dynamic Random Access Memory • Access Times: 50, 60 and 70ns • E D 0 Cycle time 20, 25 and 30ns
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    EDI4164MEV EDI4164MEV-RP EDI4164MEV50SM EDI4164MEV60SI EDI4164MEV60SM

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