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    Scans-00146886.pdf

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    • SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2270 STROBO FLASH APPLICATIONS, MEDIMUM POWER AMPLIFIER APPLICATIONS. FEATURES : • High DC Current Gain : 11^=140^450 (Vce=2V, Ic=0.5A) hFE=70 (M
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    2SC2270 AC46C

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