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DSA00203638.pdf
Manufacturer
IXYS
Partial File Text
Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C
Datasheet Type
Original
ECAD Model
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6N170
DS99004
smd diode 819
to-268
TRANSISTOR 610 smd
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