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DSAHI00055732.pdf
Manufacturer
Fairchild Semiconductor
Partial File Text
HGTG30N60B3 Data Sheet April 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The
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Original
ECAD Model
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User Tagged Keywords
G30N60B3
TA49170