DSA00151165.pdf
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Unisonic Technologies
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UTC 2SD1060
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
FEATURE
*Low collector-to-emitter saturation voltage:
VCE(sat)=0.4V max/IC=3A, IB=0.3A
APPLICATIONS
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Original
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