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    DSA00368016.pdf

    • IXYS
    • Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 42N170 IXBT 42N170 VCES = 1700 V = 75 A IC25 VCE(sat) = 3.3 V Symbol VCES VCGR VGE
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