DSASW0093815.pdf

Manufacturer Chino-Excel Technology
Partial File Text CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.2A, RDS(ON) = 300m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing c
Datasheet Type Original
ECAD Model
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