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DSA00152909.pdf
Manufacturer
Cree
Partial File Text
CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
Datasheet Type
Original
ECAD Model
Part Details
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CGH21120
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