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    DSAAQ0032476.pdf

    • Infineon Technologies
    • IPD320N20N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-
    • Original
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    DSAAQ0032476.pdf preview Download Datasheet

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