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    DSAAXSA00015567.pdf

    • Plessey Semiconductors
    • HJW Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJW is a high voltage version of the RF-HJ double polysilicon trench isolated complementary bipolar process with high Bvebo > 4.5 V
    • Original
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    DSAAXSA00015567.pdf preview Download Datasheet

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