MegaMOSTMFET
S S = 600 V IXTH/IXTM 20N60 VD lD 2 5 = 20 A
^ D S (o n ) " ß
N-Channel Enhancement Mode
Symbol VDSS V,,on
v GS
Test Conditions ^ =25°Cto 150°C
1
Maximum Ratings 600 M£2 6
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