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DSAZIHA100083620.pdf
Manufacturer
Cree
Partial File Text
CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Creeâs CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
Datasheet Type
Original
ECAD Model
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