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    DSA00592869.pdf

    • Renesas Electronics
    • Preliminary Datasheet RJK1002DPN-E0 N-Channel MOS FET 100 V, 70 A, 7.6 m Features High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Package TO-220
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