DSA00588069.pdf
- Renesas Electronics
- Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features · Built-in fast recovery diode · Low on-resistance RDS(on) = 0.42 typ. (at ID = 7 A, VGS = 10 V, T
- Original
-
Price & Stock Powered by
Findchips
