DSAXX002619.pdf

Manufacturer HT Wang
Partial File Text FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115m RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m Features Advanced trench process technology High Density Cell
Datasheet Type Original
ECAD Model

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