DSAIH000132195.pdf

Manufacturer Not Available
Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR M ICROW AVE POWER GaAs FET TECHNICAL DATA FEATURES : LO W IN T E R M O D U L A T IO N D IS T O R T IO N I M 3 = - 4 4 dBc at Po = 2 8 dBm, Single Carrier L
Datasheet Type Scan
ECAD Model

DSAIH000132195.pdf preview Download Datasheet