DSA2IH00127722.pdf

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Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIALTRANSISTOR FEATURES OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHz, V ce = 3.6 V, Class AB, Duty 1/8 NE68939 (Units in mm) OU
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DSA2IH00127722.pdf preview Download Datasheet