DSAZIHA100020826.pdf
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American Microsemiconductor
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PE1003 Transistors
Si NPN LP HF BJT
Military/High-RelN
V(BR)CEO (V)35â
V(BR)CBO (V)35
I(C) Max. (A)
Absolute Max. Power Diss. (W)250m
Maximum Operating Temp (øC)125õ
I(CBO) Max. (A)200nÃ
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Original
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