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DSA0074410.pdf
Manufacturer
Samsung Electronics
Partial File Text
SSF4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate C
Datasheet Type
Original
ECAD Model
Part Details
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SSF4N90AS
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