BLF6G22LS-100 datasheet

Manufacturer NXP Semiconductors
Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB
Datasheet Type Original
ECAD Model
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BLF6G22LS-100,118 BLF6G22LS-100,118
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