The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSA2IH00206855.pdf
Manufacturer
Not Available
Partial File Text
TOSHIBA MICROWAVE POWER GaAs FET High Power GaAs FETs (L, S-Band) Features · High power " P-ldB = 4 4 .5 d B m a t 2 3 G H z TPM2323-30 · High gain - G i dB = 11.5 dB at 2.3 G H z · Partially
Type
Scan
ECAD Model
DSA2IH00206855.pdf preview
Download Datasheet
Price & Stock Powered by
Findchips