BLS3135-20 TRAY datasheet
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NXP Semiconductors
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Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 20 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us
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