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DSAZIHA100083607.pdf
Manufacturer
Cree
Partial File Text
CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Creeâs CMPA801B025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit
Datasheet Type
Original
ECAD Model
Part Details
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CMPA801B025
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