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DSA00587915.pdf
Manufacturer
Renesas Electronics
Partial File Text
Preliminary Datasheet RQA0011DNS Silicon N-Channel MOS FET Features High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) Small outline p
Datasheet Type
Original
ECAD Model
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