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DSA00514080.pdf
Manufacturer
Cree
Partial File Text
UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2
Datasheet Type
Original
ECAD Model
Part Details
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DSA00514080.pdf preview
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Cree Microwave
UGF21060
UGF21060F
UGF21060P
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