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DSA00152934.pdf
Manufacturer
Cree
Partial File Text
CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree's CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Type
Original
ECAD Model
Part Details
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CGH55030F2
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