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    DSA007304.pdf

    • Fairchild Semiconductor
    • UniFETTM FDB52N20 200V N-Channel MOSFET Features Description ยท 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using F
    • Original
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    DSA007304.pdf preview Download Datasheet

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    FDB52N20 FDB52N20TM

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