DSA00187209.pdf

Manufacturer -
Partial File Text CES2304 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 2.8A , RDS(ON)=65m (typ) @VGS=10V. RDS(ON)=90m (typ) @VGS=4.5V. High dense cell design for low RDS(
Datasheet Type Original
ECAD Model

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