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    DSA00501064.pdf

    • Toshiba
    • 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Low reverse current: IR = 5µA (Max.) Maximum Ratings (Ta = 25°C)
    • Original
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    DSA00501064.pdf preview Download Datasheet

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