DSA2IH00214264.pdf

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Partial File Text TYPE 3N174 P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 0 1 1 2 8 5 , J A N U A R Y 1970 E N H A N C E M E N T -T Y P E t MOS SILIC O N TR A N SI
Datasheet Type Scan
ECAD Model

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