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DSA2IH00172688.pdf
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TECHNICAL INFORMATION qv J = Js (e kT - 1 ) ( 1) qVg Js = RT2 e kT 1 - THEORY The Schottky diode uses the potential barrier re sulting from a metal to semiconductor contact. Schematically it consi
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ECAD Model
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User Tagged Keywords
ANI 1015
equivalent diode for K 1457