The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSA2IH00206643.pdf
Manufacturer
Not Available
Partial File Text
TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Features · Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level · Hi
Datasheet Type
Scan
ECAD Model
DSA2IH00206643.pdf preview
Download Datasheet