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    DSA2IH00168400.pdf

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    • 7964142 -ยทยทยทยท . SAMSUNG SEMICONDUCTOR DE i IN C | 9 8 D 0 5169 D 7 ^ 39 - / / I 7 ^ 4 1 4 5 DOGSI b IRFP220/221/222/223 FEATURES N-CHANNEL POWER MOSFETS Low RoS(on) Improved ind
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    IN 414b B diode IRFP220 IRFP222 IRFP223

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