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    • FEATURES • High Output Power: P1dB = 31.5dBm (Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: r^ = 29.5%(Typ.) • Proven Reliability DESCRIPTION The FLC157XP chip is a power GaAs FET
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    C-Band Power GaAs FET HEMT Chips FLC157XP fujitsu gaas fet fujitsu hemt
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